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Samsung EVO 850 M.2 reviews

Samsung’s innovative 3D V- NAND flash memory architecture breaksthrough density, performance, and enduranc... See full description.

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product description

Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.

Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.

The 850 EVO doubles the endurance* and reliability** compared to the previous generation 840 EVO** and features a class-leading*** 5 year warranty. With enhanced long-term reliability, the 850 EVO assures long-term dependable performance of up to 30% longer than the previous generation 840 EVO.